CPC H01L 24/85 (2013.01) [H01L 24/78 (2013.01); H01L 24/48 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/78611 (2013.01); H01L 2224/78824 (2013.01); H01L 2224/85201 (2013.01); H01L 2224/85986 (2013.01)] | 5 Claims |
1. A method for manufacturing a semiconductor device in which a first bond point and a second bond point are connected by a wire, the method comprising:
a preparation step for preparing a wire bonding apparatus which comprises a capillary through which the wire is inserted and a movement mechanism for moving the capillary;
a ball bonding step in which after a free air ball is formed at a distal end of the wire inserted through the capillary, a distal end of the capillary is lowered to a crimping height, the free air ball is joined to the first bond point, and a crimping ball and a ball neck above the crimping ball are formed;
a thin-walled portion forming step in which the distal end of the capillary is moved in a horizontal direction, and a thin-walled portion having a reduced cross-sectional area is formed between the ball neck and the crimping ball;
a wire tail bending step in which after the thin-walled portion is formed, the capillary is reciprocated in an arc shape in the direction to the second bond point, and the wire is bent and deformed;
a wire tail separating step in which after the capillary is raised to unroll a wire tail, the capillary is moved in a direction to the second bond point, and the wire tail and the crimping ball are separated in the thin-walled portion; and
a wire tail joining step in which the capillary is lowered and a side surface of the separated wire tail is joined onto the crimping ball.
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