CPC H01L 24/17 (2013.01) [H01L 24/11 (2013.01); H01L 24/81 (2013.01); H01L 25/18 (2013.01); H10N 60/815 (2023.02); H01L 2224/1131 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/17177 (2013.01); H01L 2224/17179 (2013.01); H01L 2224/17505 (2013.01); H01L 2224/81815 (2013.01); H01L 2924/014 (2013.01)] | 8 Claims |
1. A method, comprising:
electrically coupling at least one qubit chip to an interposer chip via one or more injection-molded solder interconnects;
forming one or more injection-molded solder pillars between the at least one qubit chip and the interposer chip, wherein the injection-molded solder pillars are in parallel with and outside on both sides of the one or more injection-molded solder interconnects;
forming a first plurality of under bump metallizations (UBMs) on the at least one qubit chip;
forming a second plurality of the UBMs on the interposer chip;
forming a third plurality of the UBMs on the interposer chip;
attaching the qubit chip to the interposer chip such that:
a plurality of the injection-molded solder interconnects are in contact with the first plurality of UBMs on a first end of the one or more injection-molded solder interconnects and in contact with the second plurality of UBMs on a second end of the one or more injection-molded solder interconnects; and
a plurality of the one or more injection-molded solder pillars are in contact with the third plurality of UBMs on a first end of the one or more injection-molded solder pillars, wherein the third plurality of UBMs is directly adjacent the interposer chip.
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