providing a semiconductor die;

forming a conductive layer over the semiconductor die;

patterning the conductive layer to form a first contact pad, a second contact pad, and a third contact pad;

forming a buffer conductive layer between the semiconductor die and first contact pad; and

forming an under-bump metallization layer (UBM) directly on and physically contacting the first contact pad and second contact pad, wherein the UBM electrically connects the first contact pad to the second contact pad and the third contact pad is electrically isolated from the UBM.