US 12,107,041 B2
Metal plate corner structure on metal insulator metal
Yuan-Yang Hsiao, Taipei (TW); Hsiang-Ku Shen, Taiwan (TW); Dian-Hau Chen, Hsinchu (TW); Hsiao Ching-Wen, Hsinchu (TW); and Yao-Chun Chuang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jul. 26, 2023, as Appl. No. 18/359,011.
Application 18/359,011 is a continuation of application No. 17/470,680, filed on Sep. 9, 2021, granted, now 11,728,262.
Claims priority of provisional application 63/157,152, filed on Mar. 5, 2021.
Prior Publication US 2023/0369199 A1, Nov. 16, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 49/02 (2006.01); H10B 12/00 (2023.01)
CPC H01L 23/5223 (2013.01) [H01L 21/76843 (2013.01); H01L 23/528 (2013.01); H01L 28/40 (2013.01); H01L 28/75 (2013.01); H01L 28/84 (2013.01); H01L 28/91 (2013.01); H10B 12/033 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first metal-insulator-metal (MIM) structure disposed over a substrate, wherein the first MIM structure includes:
a first metal layer;
a first insulator layer disposed over the first metal layer;
a second metal layer disposed over the first insulator layer, the first insulator layer preventing the second metal layer from interfacing with the first metal layer, the second metal layer being laterally offset from the first metal layer;
a second insulator layer disposed over the second metal layer; and
a third metal layer disposed over the second insulator layer, the second insulator layer preventing the third metal layer from interfacing with the second metal layer, wherein a corner of the third metal layer is rounded and the third metal layer is laterally offset from the second metal layer.