US 12,107,037 B2
Semiconductor devices and methods of manufacturing electronic devices
George Scott, Chandler, AZ (US); Ki Yeul Yang, Seoul (KR); and Jae Hun Bae, Seoul (KR)
Assigned to Amkor Technology Singapore Holding Pte. Ltd., Singapore (SG)
Filed by Amkor Technology Singapore Holding Pte. Ltd., Singapore (SG)
Filed on Nov. 3, 2021, as Appl. No. 17/517,829.
Prior Publication US 2023/0137998 A1, May 4, 2023
Int. Cl. H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01)
CPC H01L 23/49838 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/563 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/3135 (2013.01); H01L 23/49822 (2013.01); H01L 24/16 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/16227 (2013.01); H01L 2924/18161 (2013.01)] 25 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate comprising a top side and a bottom side, a dielectric structure, and a conductive structure, wherein the conductive structure comprises a first terminal exposed from the dielectric structure;
an electronic component over the top side of the substrate; and
an encapsulant over the top side of the substrate and covering a lateral side of the electronic component;
wherein the dielectric structure comprises a first pattern base and first pattern wall that extends from the first pattern base and is adjacent to the first terminal, and the first terminal is bounded by the first pattern wall;
wherein the first pattern wall is spaced apart from the first terminal; and
wherein the first pattern base extends laterally from the first pattern wall beyond a footprint of the first pattern wall.