US 12,107,031 B2
Thermal conductive silicone composition and semiconductor device
Shota Akiba, Annaka (JP); Kunihiro Yamada, Annaka (JP); and Kenichi Tsuji, Annaka (JP)
Assigned to SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Appl. No. 17/311,077
Filed by Shin-Etsu Chemical Co., Ltd., Tokyo (JP)
PCT Filed Nov. 27, 2019, PCT No. PCT/JP2019/046264
§ 371(c)(1), (2) Date Jun. 4, 2021,
PCT Pub. No. WO2020/129555, PCT Pub. Date Jun. 25, 2020.
Claims priority of application No. 2018-238965 (JP), filed on Dec. 21, 2018.
Prior Publication US 2022/0044983 A1, Feb. 10, 2022
Int. Cl. C08G 77/20 (2006.01); C08K 3/08 (2006.01); C09K 5/06 (2006.01); H01L 23/373 (2006.01)
CPC H01L 23/3737 (2013.01) [C08G 77/20 (2013.01); C08K 3/08 (2013.01); C09K 5/063 (2013.01); C08K 2003/0806 (2013.01); C08K 2201/001 (2013.01); C08K 2201/006 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A thermal conductive silicone composition comprising:
(A) 100 parts by mass of an organopolysiloxane that has a kinetic viscosity of 10 to 100,000 mm2/s at 25° C., and is represented by the following average composition formula (1)
R1aSiO(4-a)/2  (1)
wherein R1 represents a hydrogen atom, a saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms or a hydroxy group, and a represents a number satisfying 1.8≤a≤2.2;
(B) a silver powder having a tap density of not lower than 3.0 g/cm3, a specific surface area of not larger than 2.0 m2/g and an aspect ratio of 8 to 30, the component (B) being in an amount of 300 to 11,000 parts by mass per 100 parts by mass of the component (A);
(C) an elemental gallium and/or gallium alloy having a melting point of 0 to 70° C., the component (C) being in an amount of 1 to 1,200 parts by mass per 100 parts by mass of the component (A) and present at a mass ratio [Component (C)/{Component (B)+Component (C)}] of 0.001 to 0.09; and
(D) a catalyst selected from the group consisting of a platinum-based catalyst, an organic peroxide and a catalyst for condensation reaction, the component (D) being in a catalytic amount.