US 12,107,028 B2
Thermally enhanced FCBGA package
KyungOe Kim, Incheon (KR); Wagno Alves Braganca, Jr., Incheon (KR); and DongSam Park, Incheon (KR)
Assigned to STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed by STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed on Apr. 24, 2023, as Appl. No. 18/305,913.
Application 18/305,913 is a continuation of application No. 17/304,659, filed on Jun. 24, 2021, granted, now 11,670,563.
Prior Publication US 2023/0260865 A1, Aug. 17, 2023
Int. Cl. H01L 23/367 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01)
CPC H01L 23/367 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/4871 (2013.01); H01L 21/565 (2013.01); H01L 23/3185 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 24/16 (2013.01); H01L 2224/16227 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/18161 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A method of making a semiconductor device, comprising:
providing a substrate;
providing a heat spreader including an opening formed through the heat spreader;
disposing a semiconductor die over the substrate;
dispensing a thermally conductive material onto the substrate around the semiconductor die; and
disposing the heat spreader over the substrate with the semiconductor die in the opening after dispensing the thermally conductive material, wherein a surface of the thermally conductive material is coplanar to a back surface of the semiconductor die opposite the substrate.