US 12,107,024 B2
Semiconductor device and method of manufacturing semiconductor device
Takayuki Onaka, Tokyo (JP); and Yuki Yano, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Feb. 28, 2022, as Appl. No. 17/682,603.
Claims priority of application No. 2021-088937 (JP), filed on May 27, 2021.
Prior Publication US 2022/0384283 A1, Dec. 1, 2022
Int. Cl. H01L 23/10 (2006.01); H01L 21/52 (2006.01); H01L 23/053 (2006.01)
CPC H01L 23/10 (2013.01) [H01L 21/52 (2013.01); H01L 23/053 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a metal base;
an insulating substrate arranged on the metal base;
a semiconductor element mounted on the insulating substrate; and
a case bonded on the metal base so as to surround side surfaces of the insulating substrate and the semiconductor element, wherein
a pair of first metal oxide films having a protruding shape is provided on a peripheral edge portion of the metal base, and
the case is bonded to the metal base by an adhesive arranged in a region between the first metal oxide films in the pair.