US 12,107,018 B2
Method of measuring concentration of Fe in p-type silicon wafer and SPV measurement apparatus
Shinya Fukushima, Tokyo (JP); and Takehiro Tsunemori, Tokyo (JP)
Assigned to SUMCO CORPORATION, Tokyo (JP)
Filed by SUMCO CORPORATION, Tokyo (JP)
Filed on Jun. 7, 2022, as Appl. No. 17/834,412.
Application 17/834,412 is a division of application No. 16/771,001, granted, now 11,387,151, previously published as PCT/JP2018/036946, filed on Oct. 2, 2018.
Claims priority of application No. 2017-246955 (JP), filed on Dec. 22, 2017; and application No. 2017-246979 (JP), filed on Dec. 22, 2017.
Prior Publication US 2022/0301949 A1, Sep. 22, 2022
Int. Cl. H01L 21/66 (2006.01)
CPC H01L 22/14 (2013.01) [H01L 22/12 (2013.01)] 1 Claim
OG exemplary drawing
 
1. A method of measuring a concentration of Fe in a p-type silicon wafer based on measurement by an SPV method, comprising:
prior to the measurement, subjecting a surface of the p-type silicon wafer to a HF treatment to be positively charged; and
performing the measurement after the HF treatment in an atmosphere in which an organic concentration measured by a wafer exposure test is 0.05 ng/cm2 or less.