US 12,107,009 B2
Method of dicing wafer forming modified layer in chucked wafer
Min Gyu Kang, Icheon-si (KR); and Jung Jin Lee, Icheon-si (KR)
Assigned to SK hynix Inc., Incheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Jul. 29, 2021, as Appl. No. 17/388,779.
Claims priority of application No. 10-2020-0167022 (KR), filed on Dec. 2, 2020.
Prior Publication US 2022/0172993 A1, Jun. 2, 2022
Int. Cl. H01L 21/78 (2006.01); B23K 26/364 (2014.01); B23K 26/53 (2014.01); H01L 21/683 (2006.01)
CPC H01L 21/78 (2013.01) [B23K 26/364 (2015.10); B23K 26/53 (2015.10); H01L 21/6838 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method of dicing a wafer including a first portion extending from a first edge of the wafer toward a second edge of the wafer, including a second portion extending from the second edge of the wafer toward the first edge of the wafer, and further including first scribe lane regions disposed in the first portion of the wafer, the method comprising:
loading the wafer on a wafer chuck;
performing a first chucking of fixing the second portion of the wafer to the wafer chuck without fixing the first portion of the wafer to the wafer chuck;
performing a first laser irradiating of sequentially forming first modified portions in the first scribe lane regions along a first direction from the first edge of the wafer toward the second edge of the wafer; and
separating semiconductor chips from the wafer by growing cracks from the first modified portions to a surface of the wafer.