| CPC H01L 21/67069 (2013.01) [H01J 37/32568 (2013.01); H01J 37/32697 (2013.01); H01J 37/3244 (2013.01); H01J 37/32642 (2013.01); H01J 37/32715 (2013.01); H01J 2237/202 (2013.01); H01J 2237/334 (2013.01)] | 15 Claims |
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1. A wafer processing apparatus for processing a wafer, the apparatus comprising:
a vacuum chamber;
a wafer supporting unit including a wafer supporting plate for supporting the wafer, wherein the wafer supporting plate is disposed at a lower portion of an inside of the vacuum chamber; and
an electric field forming unit forming an electric field inside the vacuum chamber,
wherein the electric field forming unit includes:
an upper electrode disposed at an upper portion of the inside of the vacuum chamber;
a lower electrode disposed in the wafer supporting unit; and
a middle electrode disposed adjacent to the wafer supporting plate between the upper electrode and the lower electrode,
wherein the middle electrode includes a metallic body portion with a vertical pillar shape and an end portion with a rounded distal end covered with an insulating material,
wherein the insulating material covering the end portion of the middle electrode is configured to be directly in contact with the wafer on the wafer supporting plate to form a capacitive connection.
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