CPC H01L 21/565 (2013.01) [B23K 26/362 (2013.01); H01L 21/67075 (2013.01); H01L 23/3157 (2013.01); H01L 23/552 (2013.01); H01L 24/49 (2013.01); B23K 2101/40 (2018.08); H01L 2924/01047 (2013.01); H01L 2924/18165 (2013.01)] | 20 Claims |
1. A system comprising:
a first workspace environment comprising:
a laser to laser ablate mold compound from a semiconductor package; and
a controller coupled to the laser to control the laser to execute a plurality of scans to laser ablate the mold compound to a threshold level; and
a second workspace environment comprising:
a hot plate; and
a fume hood adapted about the hot plate, wherein the laser ablated semiconductor package is to be adapted to the hot plate and to be acid etched to expose one or more die and one or more silver bond wires of the semiconductor package, wherein a total time of exposure of the semiconductor package to the acid etch is less than two minutes.
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