US 12,106,963 B2
Self aligned pattern formation post spacer etchback in tight pitch configurations
Sean D. Burns, Hopewell Junction, NY (US); Lawrence A. Clevenger, Rhinebeck, NY (US); Matthew E. Colburn, Schenectady, NY (US); Nelson M. Felix, Briarcliff Manor, NY (US); Sivananda K. Kanakasabapathy, Niskayuna, NY (US); Christopher J. Penny, Saratoga Springs, NY (US); Roger A. Quon, Rhineback, NY (US); and Nicole A. Saulnier, Albany, NY (US)
Assigned to Tessera LLC, San Jose, CA (US)
Filed by Tessera LLC, San Jose, CA (US)
Filed on Apr. 27, 2023, as Appl. No. 18/140,425.
Application 18/140,425 is a continuation of application No. 17/328,569, filed on May 24, 2021, granted, now 11,670,510.
Application 17/328,569 is a continuation of application No. 16/675,630, filed on Nov. 6, 2019, granted, now 11,018,007, issued on May 25, 2021.
Application 16/675,630 is a continuation of application No. 16/058,232, filed on Aug. 8, 2018, granted, now 10,529,569, issued on Jan. 7, 2020.
Application 16/058,232 is a continuation of application No. 15/786,090, filed on Oct. 17, 2017, granted, now 10,121,661, issued on Nov. 6, 2018.
Application 15/786,090 is a continuation of application No. 15/403,371, filed on Jan. 11, 2017, granted, now 9,934,970, issued on Apr. 3, 2018.
Prior Publication US 2024/0096627 A1, Mar. 21, 2024
Int. Cl. H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 21/027 (2006.01); H01L 21/28 (2006.01); H01L 21/31 (2006.01); H10K 71/20 (2023.01); H10N 70/00 (2023.01)
CPC H01L 21/0337 (2013.01) [H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 21/76816 (2013.01); H01L 23/528 (2013.01); H01L 21/0274 (2013.01); H01L 21/28123 (2013.01); H01L 21/31 (2013.01); H01L 21/76897 (2013.01); H01L 2224/0362 (2013.01); H01L 2224/11622 (2013.01); H10K 71/233 (2023.02); H10N 70/063 (2023.02)] 21 Claims
OG exemplary drawing
 
21. A method of forming a hard mask, comprising:
forming a planar topography comprising at least two first regions, at least two second regions, and at least two third regions, wherein:
each of the first, second and third regions are elongated in a first direction and disposed in parallel with one another; and
each of the first regions abuts and is disposed between a second region and a third region;
forming a first opening in a layer disposed above the planar topography; and
forming spacers on sidewalls of the first opening extending in the first direction to define a second opening, wherein the second opening exposes a portion of a single first region.