US 12,106,959 B2
Nonpolar or semipolar group III-nitride substrates
Jie Song, Branford, CT (US); and Chen Chen, Branford, CT (US)
Assigned to Saphlux, Inc., San Diego, CA (US)
Filed by Saphlux, Inc., Branford, CT (US)
Filed on Dec. 15, 2020, as Appl. No. 17/123,079.
Application 17/123,079 is a continuation in part of application No. 15/818,344, filed on Nov. 20, 2017, granted, now 10,892,159.
Prior Publication US 2021/0175077 A1, Jun. 10, 2021
Int. Cl. H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/78 (2006.01)
CPC H01L 21/02642 (2013.01) [H01L 21/02433 (2013.01); H01L 21/0254 (2013.01); H01L 21/02609 (2013.01); H01L 21/0332 (2013.01); H01L 21/7813 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method, comprising:
fabricating a mask on a semiconductor layer comprising a group III-nitride material with a first crystallographic orientation, wherein the first crystallographic orientation comprises at least one of a nonpolar orientation or a semipolar orientation, wherein the first crystallographic orientation comprises at least one of (2021), (2021), (3031), (3031), (1011), (1122), (1120), or (1010), wherein the group III-nitride material with the first crystallographic orientation is coalesced, and wherein the mask comprises a plurality of stripes comprising a masking material; and
forming, on the mask, an epitaxial layer of the group III-nitride material with the first crystallographic orientation, comprising:
growing, using nitrogen carrier gas, the group III-nitride material in the first crystallographic orientation to a thickness that is approximately 100 microns or greater than 100 microns.