	US 12,106,958 B2
	Method of using dual frequency RF power in a process chamber
Anup Kumar Singh, Santa Clara, CA (US); Rick Kustra, San Jose, CA (US); Vinayak Vishwanath Hassan, San Francisco, CA (US); Bhaskar Kumar, San Jose, CA (US); Krishna Nittala, San Jose, CA (US); Pramit Manna, Santa Clara, CA (US); Kaushik Alayavalli, Sunnyvale, CA (US); and Ganesh Balasubramanian, Fremont, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jun. 27, 2023, as Appl. No. 18/342,296.
Application 18/342,296 is a division of application No. 17/035,107, filed on Sep. 28, 2020, granted, now 11,721,545.
Prior Publication US 2023/0343586 A1, Oct. 26, 2023
Int. Cl. H01L 21/02 (2006.01); B08B 7/00 (2006.01); C23C 16/26 (2006.01); C23C 16/44 (2006.01); C23C 16/505 (2006.01); H01J 37/32 (2006.01); H01L 21/033 (2006.01)

CPC H01L 21/02274 (2013.01) [B08B 7/0035 (2013.01); C23C 16/26 (2013.01); C23C 16/4405 (2013.01); C23C 16/505 (2013.01); H01J 37/32082 (2013.01); H01J 37/3244 (2013.01); H01J 37/32862 (2013.01); H01L 21/02115 (2013.01); H01L 21/0332 (2013.01)]

20 Claims

1. A method for cleaning a chamber, comprising:

introducing a gas to a processing volume of the chamber;

providing a first radiofrequency (RF) power having a first frequency of about 40 MHz or greater to a lid of the chamber;

providing a second RF power having a second frequency to an electrode disposed in a substrate support within the processing volume, wherein the second frequency is about 10 MHz to about 20 MHz; and

removing at least a portion of a film disposed on a surface of a chamber component of the chamber.