| CPC H01J 37/32724 (2013.01) [C23C 14/541 (2013.01); C23C 16/4586 (2013.01); C23C 16/463 (2013.01); H01L 21/67248 (2013.01); H01J 2237/2065 (2013.01); H01J 2237/3344 (2013.01)] | 20 Claims |
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1. A method of manufacturing a semiconductor device, the method comprising:
a substrate loading operation of loading a substrate on a substrate support chuck provided in a process chamber, the substrate having a material film and a mask pattern having an opening for exposing part of the material film; and
a plasma etching operation of removing the part of the material film exposed through the opening of the mask pattern, by generating plasma in the process chamber,
wherein the substrate support chuck comprises:
a center plate;
an upper cooling channel provided in the center plate, the upper cooling channel extending in a spiral direction from a first end adjacent to a center of the substrate support chuck to a second end adjacent to an edge of the substrate support chuck;
a lower cooling channel provided in the center plate, the lower cooling channel extending in a spiral direction from a third end adjacent to the center of the substrate support chuck to a fourth end adjacent to the edge of the substrate support chuck;
an upper cover plate attached to an upper surface of the center plate to cover the upper cooling channel, the upper cover plate closing a upwardly open portion of the upper cooling channel;
a lower cover plate attached to a lower surface of the center plate opposite to the upper surface of the center plate to cover the lower cooling channel, the lower cover plate closing a downwardly open portion of the lower cooling channel; and
a first fin protruding from an inner wall of the upper cooling channel and a second fin protruding from an inner wall of the lower cooling channel, the first fin spirally extending along an extending direction of the upper cooling channel, and the second fin spirally extending along an extending direction of the lower cooling channel,
wherein the plasma etching operation comprises adjusting a temperature of the substrate support chuck by supplying a first coolant to the upper cooling channel and a second coolant to the lower cooling channel,
wherein the upper cooling channel is separated from the lower cooling channel such that the first coolant is not mixed with the second coolant within the substrate support chuck,
wherein a thickness of the center plate is greater than a thickness of the upper cover plate and greater than a thickness of the lower cover plate, in a vertical direction,
wherein, when viewed in a cross section of the substrate support chuck, the upper cooling channel and the lower cooling channel are mirror-symmetric with respect to a plane horizontally traversing the center plate, and
wherein, in the plasma etching operation, while the part of the material film is removed, the temperature of the substrate support chuck is adjusted between about −50° C. and about −100° C.
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16. A method of manufacturing a semiconductor device, the method comprising:
a substrate loading operation of loading a substrate on a substrate support chuck provided in a process chamber, the substrate having a material film and a mask pattern having an opening for exposing part of the material film; and
a plasma etching operation of removing the part of the material film exposed through the opening of the mask pattern, by generating plasma in the process chamber,
wherein the substrate support chuck comprises:
a center plate;
an upper cooling channel provided in the center plate, the upper cooling channel extending in a spiral direction from a first inlet through which a first coolant is introduced and a first outlet through which the first coolant is discharged, wherein a radial distance between an edge of the substrate support chuck and the first inlet of the upper cooling channel is smaller than a radial distance between the edge of the substrate support chuck and the first outlet of the upper cooling channel;
a lower cooling channel provided in the center plate, the lower cooling channel extending in a spiral direction from a second inlet through which a second coolant is introduced and a second outlet through which the second coolant is discharged, wherein a radial distance between an edge of the substrate support chuck and the second inlet of the lower cooling channel is greater than a radial distance between the edge of the substrate support chuck and the second outlet of the lower cooling channel;
an upper cover plate attached to an upper surface of the center plate to cover the upper cooling channel, the upper cover plate closing a upwardly open portion of the upper cooling channel;
a lower cover plate attached to a lower surface of the center plate opposite to the upper surface of the center plate to cover the lower cooling channel, the lower cover plate closing a downwardly open portion of the lower cooling channel; and
a first fin protruding from an inner wall of the upper cooling channel and a second fin protruding from an inner wall of the lower cooling channel, the first fin spirally extending along an extending direction of the upper cooling channel, and the second fin spirally extending along an extending direction of the lower cooling channel,
wherein the upper cooling channel is separated from the lower cooling channel such that the first coolant is not mixed with the second coolant within the substrate support chuck,
wherein a thickness of the center plate is greater than a thickness of the upper cover plate and greater than a thickness of the lower cover plate, in a vertical direction,
wherein, when viewed in a cross section of the substrate support chuck, the upper cooling channel and the lower cooling channel are mirror-symmetric with respect to a plane horizontally traversing the center plate, and
wherein the plasma etching operation comprises adjusting a temperature of the substrate support chuck by supplying the first coolant to the first inlet of the upper cooling channel and the second coolant to the second inlet of the lower cooling channel.
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