| CPC H01J 37/32642 (2013.01) [C23C 16/4586 (2013.01); H01J 37/32697 (2013.01); H01J 37/32724 (2013.01); H01L 21/68785 (2013.01); C23C 16/45565 (2013.01); C23C 16/466 (2013.01); H01J 37/32091 (2013.01); H01J 37/32183 (2013.01); H01L 21/67069 (2013.01); H01L 21/6831 (2013.01); H01L 21/6833 (2013.01)] | 20 Claims |
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1. A plasma process apparatus comprising:
a chamber in which a plasma process is performed;
an electrostatic chuck which supports a wafer inside the chamber and comprises a first portion and a second portion disposed on the first portion, a width of the first portion in a first direction being greater than a width of the second portion in the first direction;
a first electrode disposed inside the electrostatic chuck;
a second electrode which is spaced apart from the first electrode inside the electrostatic chuck, surrounds the first electrode in a plane defined by the first direction and a second direction perpendicular to the first direction, and is disposed on the same plane as the first electrode;
a power supply configured to apply a voltage to each of the first electrode and the second electrode;
a plurality of cooling gas supply lines which penetrates the electrostatic chuck in a third direction perpendicular to the first and second directions and is configured to provide a cooling gas to the wafer;
a focus ring which surrounds side walls of the second portion of the electrostatic chuck and includes a first upper horizontal surface, a second upper horizontal surface, and an upper connecting surface directly connected to the first upper horizontal surface and the second upper horizontal surface and forming an oblique angle with respect to the second upper horizontal surface; and
a junction portion disposed between the first portion of the electrostatic chuck and the focus ring,
wherein the junction portion comprises:
a first layer having a first thickness, and disposed on the first portion of the electrostatic chuck;
a second layer having a second thickness smaller than the first thickness, and disposed on the first layer and including a metal; and
a third layer having a third thickness smaller than the first thickness and the second thickness, and disposed between the focus ring and the second layer in a vertical the third direction,
wherein a material of the first layer is different from a material of the third layer,
wherein the second layer is directly attached to an upper surface of the first layer and a lower surface of the third layer, and disposed between the first layer and the third layer,
wherein the first thickness is two to five times thicker than the second thickness,
wherein the second upper horizontal surface entirely overlaps the first portion of the electrostatic chuck in the third direction and the upper connecting surface at least partially overlaps the first portion of the electrostatic chuck in the third direction, and
wherein the first layer, the second layer and the third layer overlap the first portion of the electrostatic chuck, at least a portion of the second upper horizontal surface, and at least a portion of the upper connecting surface in the third direction.
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