US 12,106,904 B2
Semiconductor device with a booster layer and method for fabricating the same
Se-Hun Kang, Gyeonggi-do (KR); Han-Joon Kim, Gyeonggi-do (KR); and Ki-Vin Im, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Jul. 8, 2022, as Appl. No. 17/860,367.
Application 17/860,367 is a continuation of application No. 16/865,957, filed on May 4, 2020, granted, now 11,410,813.
Claims priority of application No. 10-2019-0144440 (KR), filed on Nov. 12, 2019.
Prior Publication US 2022/0351903 A1, Nov. 3, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01G 4/10 (2006.01); H01L 29/51 (2006.01); H01L 49/02 (2006.01); H10B 12/00 (2023.01)
CPC H01G 4/10 (2013.01) [H01L 28/40 (2013.01); H01L 29/517 (2013.01); H10B 12/30 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first electrode;
a first booster layer over the first electrode;
a first tetragonal hafnium oxide layer over the first booster layer;
a seed layer over the first tetragonal hafnium oxide layer;
a second booster layer over the seed layer;
a second tetragonal hafnium oxide layer over the second booster layer;
a niobium oxide layer over the second hafnium oxide layer;
a niobium nitride layer over the niobium oxide layer; and
a second electrode over the niobium nitride layer.