US 12,106,794 B2
Memory device adjusting duty cycle and memory system having the same
Dae-Sik Moon, Suwon-si (KR); Gil-Hoon Cha, Hwaseong-si (KR); Ki-Seok Oh, Seoul (KR); Chang-Kyo Lee, Seoul (KR); Yeon-Kyu Choi, Seoul (KR); Jung-Hwan Choi, Hwaseong-si (KR); Kyung-Soo Ha, Hwaseong-si (KR); and Seok-Hun Hyun, Seongnam-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD, Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jun. 7, 2023, as Appl. No. 18/330,527.
Application 18/330,527 is a continuation of application No. 18/314,243, filed on May 9, 2023.
Application 18/314,243 is a continuation of application No. 17/816,138, filed on Jul. 29, 2022, granted, now 11,749,338.
Application 17/816,138 is a continuation of application No. 17/807,163, filed on Jun. 16, 2022, granted, now 11,749,337.
Application 17/807,163 is a continuation of application No. 17/564,564, filed on Dec. 29, 2021, granted, now 11,423,971, issued on Aug. 23, 2022.
Application 17/564,564 is a continuation of application No. 17/148,915, filed on Jan. 14, 2021, granted, now 11,393,522, issued on Jul. 19, 2022.
Application 17/148,915 is a continuation of application No. 16/230,185, filed on Dec. 21, 2018, granted, now 10,923,175, issued on Feb. 16, 2021.
Claims priority of application No. 10-2018-0012423 (KR), filed on Jan. 31, 2018; and application No. 10-2018-0062094 (KR), filed on May 30, 2018.
Prior Publication US 2023/0317138 A1, Oct. 5, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/40 (2006.01); G06F 3/06 (2006.01); G11C 7/22 (2006.01); G11C 11/4076 (2006.01); G11C 11/409 (2006.01)
CPC G11C 11/4076 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0653 (2013.01); G06F 3/0659 (2013.01); G06F 3/0673 (2013.01); G11C 7/222 (2013.01); G11C 11/409 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for performing a duty adjustment operation in a memory system, the method comprising:
transmitting, by a memory controller, a write clock and a control command to a synchronous dynamic random access memory (SDRAM) device;
generating, by the SDRAM device, an internal write clock based on the write clock;
performing, by the SDRAM device, a duty monitoring operation on the internal write clock in response to the control command for generating a duty monitoring information;
storing the duty monitoring information in a first mode register set (MRS); transmitting, by the SDRAM device, the duty monitoring information to the memory controller;
generating, by the memory controller, a duty control signal based on the duty monitoring information;
transmitting, by the memory controller, the duty control signal;
storing the duty control signal in a second MRS of the SDRAM device; and
performing, by the SDRAM device, the duty adjustment operation on the internal write clock using the duty control signal stored in the second MRS for generating a duty adjusted internal write clock,
wherein the duty control signal includes a polarity of a duty cycle adjustment with which the memory controller decides whether to increase a portion of logic level high of the internal write clock or to increase a portion of logic level low of the internal write clock.