US 12,106,791 B2
Doped BiSb (012) or undoped BiSb (001) topological insulator with GeNiFe buffer layer and/or interlayer for SOT based sensor, memory, and storage devices
Quang Le, San Jose, CA (US); Brian R. York, San Jose, CA (US); Cherngye Hwang, San Jose, CA (US); Xiaoyong Liu, San Jose, CA (US); Michael A. Gribelyuk, San Jose, CA (US); Xiaoyu Xu, San Jose, CA (US); Susumu Okamura, San Jose, CA (US); Kuok San Ho, Emerald Hills, CA (US); Hisashi Takano, San Jose, CA (US); and Randy G. Simmons, San Jose, CA (US)
Assigned to Western Digital Technologies, Inc., San Jose, CA (US)
Filed by Western Digital Technologies, Inc., San Jose, CA (US)
Filed on Jun. 30, 2022, as Appl. No. 17/854,785.
Prior Publication US 2024/0005973 A1, Jan. 4, 2024
Int. Cl. G11C 11/16 (2006.01); G11B 5/39 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01); H10N 52/00 (2023.01); H10N 52/80 (2023.01)
CPC G11C 11/161 (2013.01) [G11B 5/3906 (2013.01); H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02); H10N 52/00 (2023.02); H10N 52/80 (2023.02)] 34 Claims
OG exemplary drawing
 
1. A spin-orbit torque (SOT) device, comprising:
a first Germanium Nickel Iron (GeXNiFe) comprising layer, where x is numeral between 44 and 90, the first GeXNiFe comprising layer having a thickness less than or equal to about 40 Å; and
a bismuth antimony (BiSb) layer disposed over the first GeXNiFe comprising layer, wherein:
the BiSb layer is doped and has a (012) crystal orientation, or
the BiSb layer is undoped and has a (001) crystal orientation.