US 12,106,784 B2
Read sensor with ordered heusler alloy free layer and semiconductor barrier layer
Yuankai Zheng, Fremont, CA (US); Susumu Okamura, San Jose, CA (US); Brian R. York, San Jose, CA (US); Zhitao Diao, Fremont, CA (US); and James Mac Freitag, Sunnyvale, CA (US)
Assigned to Western Digital Technologies, Inc., San Jose, CA (US)
Filed by Western Digital Technologies, Inc., San Jose, CA (US)
Filed on Jul. 28, 2023, as Appl. No. 18/227,537.
Claims priority of provisional application 63/431,252, filed on Dec. 8, 2022.
Prior Publication US 2024/0194221 A1, Jun. 13, 2024
Int. Cl. G11B 5/31 (2006.01); G11B 5/39 (2006.01)
CPC G11B 5/3146 (2013.01) [G11B 5/314 (2013.01); G11B 5/3929 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A read sensor, comprising:
a shield;
an amorphous break layer disposed over the shield;
a seed layer disposed over the amorphous break layer, the seed layer having a BCC texture and a (100) orientation;
a first ferromagnetic layer disposed over the seed layer, the first ferromagnetic layer having a BCC texture and a (100) orientation;
a barrier layer disposed over the first ferromagnetic layer, the barrier layer comprising a semiconductor material; and
a second ferromagnetic layer disposed over the barrier layer.