CPC G11B 5/255 (2013.01) [G11B 5/3106 (2013.01); G11B 5/40 (2013.01); G11B 2005/0021 (2013.01); G11B 2005/0024 (2013.01); G11B 5/4826 (2013.01)] | 20 Claims |
1. A device with a protective layer, comprising:
a substrate;
a seed layer formed on the substrate; and
a diamond-like carbon (DLC) layer formed on the seed layer, wherein
the seed layer is a silicon nitride (SiN) layer, and a content of nitrogen in the silicon nitride layer is 9%-17%;
wherein the silicon nitride layer has a first interface adjacent to the diamond-like carbon layer and a second interface adjacent to the substrate, and a content of nitrogen on the second interface is greater than a content of nitrogen on the first interface.
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