US 12,105,545 B2
Internal power generation circuit
Jiawei Guan, Wuxi (CN); Wenting Shi, Wuxi (CN); Haisong Li, Wuxi (CN); Yangbo Yi, Wuxi (CN); and Lixin Zhang, Wuxi (CN)
Assigned to Wuxi Chipown Microelectronics Co., Ltd., Jiangsu (CN)
Appl. No. 17/912,417
Filed by Wuxi Chipown Microelectronics Co., Ltd., Jiangsu (CN)
PCT Filed Oct. 30, 2020, PCT No. PCT/CN2020/125037
§ 371(c)(1), (2) Date Sep. 16, 2022,
PCT Pub. No. WO2022/057026, PCT Pub. Date Mar. 24, 2022.
Claims priority of application No. 202010969609.5 (CN), filed on Sep. 15, 2020.
Prior Publication US 2023/0205241 A1, Jun. 29, 2023
Int. Cl. G05F 1/56 (2006.01)
CPC G05F 1/56 (2013.01) 15 Claims
OG exemplary drawing
 
1. An internal power generation circuit for supplying a target voltage to an internal circuit, comprising:
a first internal power generation circuit, configured to generate a first power signal based on an external power signal, and comprising an N-channel Metal Oxide Semiconductor (NMOS) transistor, wherein a voltage of the first power signal is lower than a voltage of the external power signal by at least a threshold voltage of one NMOS transistor,
wherein the internal power generation circuit further comprises:
a booster unit configured to perform boosting on the first power signal to output a boosted signal, wherein a voltage of the boosted signal is higher than the voltage of the first power signal by at least the threshold voltage of one NMOS transistor;
a self-starting feedback circuit configured to generate an output voltage signal based on the boosted signal and the external power signal, wherein before the output voltage signal reaches the target voltage, the output voltage signal follows a magnitude of the external power signal, and after the output voltage signal reaches the target voltage, the output voltage signal holds a magnitude of the target voltage.