	US 12,105,411 B2
	Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method for manufacturing semiconductor device
Kota Suzuki, Tokyo (JP); and Kayo Chaen, Tokyo (JP)
Assigned to HOYA CORPORATION, Tokyo (JP)
Appl. No. 17/626,330
Filed by HOYA CORPORATION, Tokyo (JP)
PCT Filed Aug. 24, 2020, PCT No. PCT/JP2020/031888 § 371(c)(1), (2) Date Jan. 11, 2022, PCT Pub. No. WO2021/044890, PCT Pub. Date Mar. 11, 2021.
Claims priority of application No. 2019-161217 (JP), filed on Sep. 4, 2019.
Prior Publication US 2022/0269161 A1, Aug. 25, 2022
Int. Cl. G03F 1/24 (2012.01); G03F 1/38 (2012.01); G03F 1/48 (2012.01); G03F 7/20 (2006.01)

CPC G03F 1/24 (2013.01) [G03F 1/38 (2013.01); G03F 1/48 (2013.01); G03F 7/20 (2013.01)]

14 Claims

7. A reflective mask comprising:

a substrate; and

at least one thin film formed on a main surface of the substrate, wherein:

the thin film is at least one selected from a multilayer reflective film and a protective film;

an absorber pattern is on the multilayer reflective film or the protective film;

the thin film comprises a matrix material constituting the thin film and a small-amount material other than the matrix material; and

a ratio (I₂/I₁) of secondary ion intensity (I₂) of the small-amount material in the thin film to secondary ion intensity (I₁) of the matrix material, as measured by time-of-flight secondary ion mass spectrometry (TOF-SIMS) analysis of the thin film, is more than 0 and not more than 0.300.