US 12,104,278 B2
Silicon carbide substrate
Tsubasa Honke, Osaka (JP); and Kyoko Okita, Osaka (JP)
Assigned to Sumitomo Electric Industries, Ltd., Osaka (JP)
Appl. No. 17/611,138
Filed by SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka (JP)
PCT Filed Mar. 19, 2020, PCT No. PCT/JP2020/012435
§ 371(c)(1), (2) Date Nov. 13, 2021,
PCT Pub. No. WO2020/235205, PCT Pub. Date Nov. 26, 2020.
Claims priority of application No. 2019-093883 (JP), filed on May 17, 2019.
Prior Publication US 2022/0220637 A1, Jul. 14, 2022
Int. Cl. C30B 29/06 (2006.01); C30B 29/36 (2006.01); C30B 29/64 (2006.01); C30B 33/00 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01); H01L 29/36 (2006.01); C09G 1/02 (2006.01); C09G 1/04 (2006.01); C30B 23/00 (2006.01); C30B 23/02 (2006.01)
CPC C30B 29/36 (2013.01) [C30B 29/06 (2013.01); C30B 33/00 (2013.01); H01L 21/02021 (2013.01); H01L 21/02024 (2013.01); H01L 21/02052 (2013.01); H01L 29/1608 (2013.01); H01L 29/36 (2013.01); C09G 1/02 (2013.01); C09G 1/04 (2013.01); C30B 23/00 (2013.01); C30B 23/02 (2013.01); C30B 23/025 (2013.01); C30B 29/64 (2013.01); H01L 21/02019 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); Y10T 428/219 (2015.01); Y10T 428/24355 (2015.01); Y10T 428/24777 (2015.01); Y10T 428/24942 (2015.01); Y10T 428/31 (2015.01)] 6 Claims
OG exemplary drawing
 
1. A silicon carbide substrate comprising:
a first main surface;
a second main surface opposite to the first main surface; and
a chamfered portion contiguous to each of the first main surface and the second main surface,
the silicon carbide substrate having a maximum diameter of 150 mm or more,
a surface manganese concentration in the chamfered portion being 1×1011 atoms/cm2 or less, and
a manganese concentration in the first main surface is 1×109 atoms/cm2 or less and lower than the surface manganese concentration in the chamfered portion.