	US 12,104,243 B2
	Methods and apparatus for processing a substrate
Annamalai Lakshmanan, Fremont, CA (US); Jacqueline S. Wrench, San Jose, CA (US); Feihu Wang, San Jose, CA (US); Yixiong Yang, Santa Clara, CA (US); Joung Joo Lee, San Jose, CA (US); Srinivas Gandikota, Santa Clara, CA (US); Sang-heum Kim, Mountain View, CA (US); Zhebo Chen, San Jose, CA (US); and Gang Shen, San Jose, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jun. 16, 2021, as Appl. No. 17/348,849.
Prior Publication US 2022/0403505 A1, Dec. 22, 2022
Int. Cl. C23C 14/02 (2006.01); C23C 14/06 (2006.01); C23C 14/16 (2006.01); C23C 14/58 (2006.01); C23C 16/02 (2006.01); C23C 16/06 (2006.01); C23C 16/42 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); C23C 16/56 (2006.01)

CPC C23C 16/0281 (2013.01) [C23C 14/021 (2013.01); C23C 14/025 (2013.01); C23C 14/0682 (2013.01); C23C 14/16 (2013.01); C23C 14/5886 (2013.01); C23C 16/0227 (2013.01); C23C 16/06 (2013.01); C23C 16/42 (2013.01); C23C 16/45527 (2013.01); C23C 16/52 (2013.01); C23C 16/56 (2013.01)]

20 Claims

1. A method for processing a substrate, comprising:

depositing a silicide layer within a feature defined in a layer on a substrate;

forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition; and

depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.