US 12,103,481 B2
Occupant protection device
Shunpei Yamazaki, Setagaya (JP); Takayuki Ikeda, Atsugi (JP); and Yoshiyuki Kurokawa, Sagamihara (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Oct. 18, 2023, as Appl. No. 18/381,330.
Application 18/381,330 is a continuation of application No. 17/337,464, filed on Jun. 3, 2021, granted, now 11,794,679.
Application 17/337,464 is a continuation of application No. 15/544,087, granted, now 11,027,684, issued on Jun. 8, 2021, previously published as PCT/IB2016/050184, filed on Jan. 15, 2016.
Claims priority of application No. 2015-012880 (JP), filed on Jan. 27, 2015.
Prior Publication US 2024/0140341 A1, May 2, 2024
Int. Cl. B60R 21/00 (2006.01); B60R 21/0134 (2006.01); G06V 20/56 (2022.01); B60R 21/01 (2006.01); B60R 21/013 (2006.01)
CPC B60R 21/0134 (2013.01) [B60R 21/00 (2013.01); G06V 20/56 (2022.01); B60R 2021/01013 (2013.01); B60R 2021/01211 (2013.01); B60R 21/013 (2013.01); G06T 2207/30252 (2013.01)] 8 Claims
OG exemplary drawing
 
2. An imaging device comprising:
a pixel portion comprising a plurality of pixels arranged in a matrix; and
a driver circuit,
wherein each of the plurality of pixels comprises a light-receiving element, a first transistor, and a capacitor which is electrically connected to a cathode of the light-receiving element through the first transistor,
wherein the driver circuit comprises a second transistor,
wherein the second transistor is on a different layer from the first transistor, the capacitor, and the light-receiving element,
wherein the first transistor and the capacitor are overlapped with an anode of the light-receiving element,
wherein the first transistor comprises a first channel formation region, a first conductive layer as a first gate, and a source or drain,
wherein the second transistor comprises a second channel formation region and a second conductive layer as a second gate,
wherein the anode of the light-receiving element is on a first side of the first channel formation region,
wherein the first conductive layer is on a second side which is on the side opposite to the first side of the first channel formation region,
wherein the anode of the light-receiving element is on a first side of the second channel formation region,
wherein the second conductive layer is on the first side of the second channel formation region,
wherein a first electrode of the capacitor is on the same layer as the first conductive layer,
wherein a second electrode of the capacitor is on the same layer as a third conductive layer which is electrically connected to the source or drain of the first transistor, and
wherein a side surface of the light-receiving element is in contact with an insulating layer.