US 11,778,841 B2
Photoelectric conversion element, solid-state imaging device, and electronic device
Shintarou Hirata, Kanagawa (JP); Masahiro Joei, Kanagawa (JP); Kenichi Murata, Kanagawa (JP); Masashi Bando, Tokyo (JP); Yosuke Saito, Tokyo (JP); and Ryosuke Suzuki, Kanagawa (JP)
Assigned to SONY CORPORATION, Tokyo (JP); and SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 17/250,425
Filed by SONY CORPORATION, Tokyo (JP); and SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Jul. 30, 2019, PCT No. PCT/JP2019/029804
§ 371(c)(1), (2) Date Jan. 20, 2021,
PCT Pub. No. WO2020/027117, PCT Pub. Date Feb. 6, 2020.
Claims priority of application No. 2018-142985 (JP), filed on Jul. 30, 2018.
Prior Publication US 2021/0265582 A1, Aug. 26, 2021
Int. Cl. H01L 27/146 (2006.01); H10K 30/82 (2023.01); H10K 30/30 (2023.01); H10K 39/32 (2023.01)
CPC H10K 30/82 (2023.02) [H10K 30/30 (2023.02); H10K 39/32 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A photoelectric conversion element, comprising:
a first electrode;
a work function control layer that contains a hexavalent molybdenum oxide, a pentavalent molybdenum oxide, and a tetravalent molybdenum oxide, wherein
the work function control layer has a larger amount of oxygen than an amount of oxygen satisfying a stoichiometric composition, and
an amount of the hexavalent molybdenum oxide is larger than a total amount of the pentavalent molybdenum oxide and the tetravalent molybdenum oxide;
a photoelectric conversion layer;
an oxide semiconductor layer;
a second electrode, wherein the first electrode, the work function control layer, the photoelectric conversion layer, the oxide semiconductor layer, and the second electrode are in this order;
an insulating layer; and
a third electrode, wherein
the third electrode is apart from the second electrode, and
the third electrode faces the photoelectric conversion layer via the insulating layer.
 
11. A photoelectric conversion element, comprising:
a first electrode;
a work function control layer that contains
a hexavalent molybdenum oxide, a pentavalent molybdenum oxide, and a tetravalent molybdenum oxide, and
an oxide containing molybdenum and at least one metal element different from the molybdenum,
wherein the work function control layer has a larger amount of oxygen than an amount of oxygen satisfying a stoichiometric composition;
a photoelectric conversion layer;
an oxide semiconductor layer;
a second electrode, wherein the first electrode, the work function control layer, the photoelectric conversion layer, the oxide semiconductor layer, and the second electrode are in this order;
an insulating layer; and
a third electrode, wherein
the third electrode is apart from the second electrode, and
the third electrode faces the photoelectric conversion layer via the insulating layer.