US 11,777,279 B2
Laser architectures using quantum well intermixing techniques
Alfredo Bismuto, Sunnyvale, CA (US); Mark Alan Arbore, Los Altos, CA (US); and Ross M. Audet, Menlo Park, CA (US)
Assigned to Apple Inc., Cupertino, CA (US)
Filed by Apple Inc., Cupertino, CA (US)
Filed on Sep. 17, 2021, as Appl. No. 17/478,670.
Application 17/478,670 is a continuation of application No. 16/649,965, granted, now 11,158,996, previously published as PCT/US2018/052679, filed on Sep. 25, 2018.
Claims priority of provisional application 62/564,419, filed on Sep. 28, 2017.
Prior Publication US 2022/0006267 A1, Jan. 6, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01S 5/00 (2006.01); H01S 5/40 (2006.01); H01S 5/042 (2006.01); H01S 5/20 (2006.01); H01S 5/22 (2006.01); H01S 5/34 (2006.01); H01S 5/16 (2006.01)
CPC H01S 5/4087 (2013.01) [H01S 5/04256 (2019.08); H01S 5/162 (2013.01); H01S 5/2059 (2013.01); H01S 5/2228 (2013.01); H01S 5/3414 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A laser chip comprising:
a first laser stripe including:
a first sub-region of the first laser stripe; and
a second sub-region of the first laser stripe,
wherein a band structure of the first sub-region is different than a band structure of the second sub-region; and
a second laser stripe including:
a third sub-region along an active region of the second laser stripe; and
a fourth sub-region along the active region of the second laser stripe,
wherein a band structure of the third sub-region is different than a band structure of the fourth sub-region
wherein at least two of the first sub-region, the second sub-region, the third sub-region, or the fourth sub-region are configured with the same band structure; and wherein the first sub-region, the second sub-region, the third sub-region, and the fourth sub-region each include a corresponding region of a set of quantum well layers.