US 11,776,927 B2
Semiconductor device including a solder compound containing a compound Sn/Sb
Thomas Behrens, Wenzenbach (DE); Alexander Heinrich, Bad Abbach (DE); Evelyn Napetschnig, Diex (AT); Bernhard Weidgans, Bernhardswald (DE); Catharina Wille, Regensburg (DE); and Christina Yeong, Johor (MY)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Jul. 15, 2021, as Appl. No. 17/376,372.
Application 17/376,372 is a division of application No. 16/556,823, filed on Aug. 30, 2019, granted, now 11,069,644.
Claims priority of application No. 10 2018 123 924.6 (DE), filed on Sep. 27, 2018.
Prior Publication US 2022/0216173 A1, Jul. 7, 2022
Int. Cl. H01L 23/00 (2006.01); B23K 35/26 (2006.01); C22C 13/02 (2006.01)
CPC H01L 24/29 (2013.01) [B23K 35/262 (2013.01); C22C 13/02 (2013.01); H01L 24/83 (2013.01); H01L 2224/2922 (2013.01); H01L 2224/29211 (2013.01); H01L 2224/29239 (2013.01); H01L 2224/29244 (2013.01); H01L 2224/29247 (2013.01); H01L 2224/29255 (2013.01); H01L 2224/29264 (2013.01); H01L 2224/29269 (2013.01); H01L 2224/83447 (2013.01); H01L 2224/83455 (2013.01); H01L 2224/83815 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01051 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of making a semiconductor device comprising:
providing a semiconductor die comprising a first surface and a second surface opposite to the first surface;
arranging a first metallization layer on the first surface of the semiconductor die;
arranging a first solder layer on the first metallization layer, wherein the first solder layer contains the compound Sn/Sb, wherein the material composition of the compound Sn/Sb is such that the ratio of Sb in the compound is in a range from 17% to 90%; and
providing a first contact member comprising a Cu-based base body and a Ni-based layer disposed on a main surface of the Cu-based base body, wherein the first contact member is connected with the Ni-based layer to the first solder layer.