US 11,776,629 B2
Threshold voltage based on program/erase cycles
Niccolo' Righetti, Boise, ID (US); Kishore K. Muchherla, Fremont, CA (US); Jeffrey S. McNeil, Jr., Nampa, ID (US); Akira Goda, Boise, ID (US); Todd A. Marquart, Boise, ID (US); Mark A. Helm, Santa Cruz, CA (US); Gil Golov, Backnang (DE); Jeremy Binfet, Boise, ID (US); Carmine Miccoli, Boise, ID (US); and Giuseppina Puzzilli, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 17, 2020, as Appl. No. 16/995,517.
Prior Publication US 2022/0051722 A1, Feb. 17, 2022
Int. Cl. G11C 16/10 (2006.01); G11C 16/14 (2006.01)
CPC G11C 16/10 (2013.01) [G11C 16/14 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method, comprising:
in response to a memory device operating in a first portion of a service life of the memory device, programming at least one memory cell of the memory device to a first particular threshold voltage corresponding to a desired data state, wherein the first portion of the service life is defined by a program erase cycles (PEC) count from zero to a threshold PEC count; and
in response to the memory device operating in a second portion of the service life, programming at least one memory cell of the memory device to a second particular threshold voltage corresponding to the desired data state, wherein the second portion of the service life is defined by a PEC count greater than the threshold PEC count,
wherein the threshold PEC count, the first particular threshold voltage, the second particular threshold voltage, the first portion of service life, and the second portion of service life are determined prior to initiation of the service life and without reading a threshold voltage of the memory device,
wherein the second portion of the service life is subsequent to the first portion of the service life, and
wherein the second particular threshold voltage is different than the first particular threshold voltage.