US 11,776,590 B2
On-the-fly programming and verifying method for memory cells based on counters and ECC feedback
Riccardo Muzzetto, Arcore (IT); Ferdinando Bedeschi, Biassono (IT); and Umberto Di Vincenzo, Capriate san Gervasio (IT)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on May 19, 2022, as Appl. No. 17/748,866.
Application 17/748,866 is a continuation of application No. 17/075,502, filed on Oct. 20, 2020, granted, now 11,450,358.
Claims priority of application No. PCT/IB2020/000080 (WO), filed on Mar. 3, 2020.
Prior Publication US 2022/0351758 A1, Nov. 3, 2022
Int. Cl. G11C 7/10 (2006.01); G11C 7/06 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 29/42 (2006.01)
CPC G11C 7/1009 (2013.01) [G11C 7/06 (2013.01); G11C 7/1012 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 29/42 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of operating memory cells, comprising:
receiving a previous user data and a new user data;
determining mask register information based at least in part on receiving the previous user data and the new user data;
counting one or more first quantities of a first logic value and one or more second quantities of a second logic value to be written based at least in part on the mask register information and the new user data;
storing a quantity of bits having the first logic value into a first counter and storing a quantity of bits having the second logic value into a second counter;
applying a programming pulse to the memory cells according to the mask register information based at least in part on initiating a write sequence programming sequence using a first write sequence or a second write sequence; and
performing an error correction operation based at least in part on comparing a quantity of programmed memory cells to a threshold quantity of programmed memory cells having the first logic value or the second logic value.