| CPC G11C 7/062 (2013.01) [G11C 5/06 (2013.01); G11C 7/10 (2013.01); G11C 8/10 (2013.01); G11C 11/4093 (2013.01)] | 17 Claims |
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1. A sense amplifier comprising:
a bit line sense amplifier comprising a first transistor and a second transistor spaced apart from each other in a first direction;
a second conductive line configured to electrically connect the first transistor to the second transistor and extending in the first direction; and
a local sense amplifier configured to at least partially overlap the second conductive line and disposed between the first transistor and the second transistor, wherein the local sense amplifier comprises:
an active region;
a plurality of gate patterns at least partially extending in the first direction and disposed on the active region;
a first contact disposed between the plurality of gate patterns and comprising a long side extending in the first direction and a short side extending in a second direction crossing the first direction; and
a first conductive line electrically connected to the first contact while overlapping the first contact in a plan view and comprising a first conductive region extending in the first direction,
wherein the long side has a first width in the first direction, the short side has a second width in the second direction, and the first width is longer than the second width.
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