CPC G01N 27/4145 (2013.01) [G01N 27/4146 (2013.01); G01N 33/48721 (2013.01); H01L 21/743 (2013.01); H01L 29/66772 (2013.01); H01L 29/78696 (2013.01)] | 20 Claims |
1. A device, comprising:
a cis well associated with a cis electrode;
a trans well associated with a trans electrode;
a field effect transistor (FET) positioned between the cis well and the trans well, the field effect transistor (FET) including:
a fluidic system defined therein, the fluidic system including:
a first cavity facing the cis well;
a second cavity fluidically connected to the trans well; and
a through via extending through the field effect transistor from the first cavity;
a membrane positioned between the cis well and the first cavity;
a first nanoscale opening fluidically connecting the cis well and the first cavity, the first nanoscale opening having an inner diameter, wherein the first nanoscale opening extends through the membrane, and wherein the first nanoscale opening inner diameter ranges from about 0.5 nm to about 3 nm; and
a second nanoscale opening fluidically connecting the through via and the second cavity, the second nanoscale opening having an inner diameter, wherein the second nanoscale opening inner diameter ranges from about 2 nm to about 20 nm, and wherein the second nanoscale opening inner diameter is at least about two times larger than the first nanoscale opening inner diameter.
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