CPC G01K 7/01 (2013.01) [G01K 7/22 (2013.01); G01K 7/28 (2013.01); H02H 9/00 (2013.01); H02H 9/02 (2013.01); H02H 9/04 (2013.01)] | 16 Claims |
1. A device for temperature monitoring of a power transistor formed in a first semiconductor die comprising;
a temperature-sensing resistor disposed in the first semiconductor die, wherein a side of the temperature-sensing resistor is coupled to the power transistor on a voltage input side of the transistor;
a controller coupled to a second side of the temperature-sensing resistor wherein the controller is configured to detect a voltage across the resistor and trigger a temperature related corrective action using the voltage across temperature-sensing resistor, wherein the temperature related corrective action regulates a current though the power transistor.
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