US 11,774,296 B2
Method and circuit for sensing MOSFET temperature for load switch application
Zhenyu Wang, Santa Clara, CA (US); Jian Yin, San Ramon, CA (US); Lingpeng Guan, San Jose, CA (US); Sitthipong Angkititrakul, Dublin, CA (US); Christopher Ben Bartholomeusz, Draper, UT (US); and Xiaobin Wang, San Jose, CA (US)
Assigned to ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP, Toronto (CA)
Filed by Alpha and Omega Semiconductor International LP, Toronto (CA)
Filed on Nov. 11, 2021, as Appl. No. 17/524,566.
Prior Publication US 2023/0147081 A1, May 11, 2023
Int. Cl. G01K 7/01 (2006.01); H02H 5/04 (2006.01); G01K 7/22 (2006.01); G01K 7/28 (2006.01); H02H 9/00 (2006.01); H02H 9/02 (2006.01); H02H 9/04 (2006.01)
CPC G01K 7/01 (2013.01) [G01K 7/22 (2013.01); G01K 7/28 (2013.01); H02H 9/00 (2013.01); H02H 9/02 (2013.01); H02H 9/04 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A device for temperature monitoring of a power transistor formed in a first semiconductor die comprising;
a temperature-sensing resistor disposed in the first semiconductor die, wherein a side of the temperature-sensing resistor is coupled to the power transistor on a voltage input side of the transistor;
a controller coupled to a second side of the temperature-sensing resistor wherein the controller is configured to detect a voltage across the resistor and trigger a temperature related corrective action using the voltage across temperature-sensing resistor, wherein the temperature related corrective action regulates a current though the power transistor.