US 11,773,480 B2
MXene layers as substrates for growth of highly oriented perovskite thin films
Zongquan Gu, Chalfont, PA (US); Babak Anasori, Fisher, IN (US); Andrew Lewis Bennett-Jackson, Montclair, NJ (US); Matthias Falmbigl, Philadelphia, PA (US); Dominic Imbrenda, Deptford, NJ (US); Yury Gogotsi, Warminster, PA (US); and Jonathan E. Spanier, Bala Cynwyd, PA (US)
Assigned to Drexel University, Philadelphia, PA (US)
Appl. No. 16/756,337
Filed by Drexel University, Philadelphia, PA (US)
PCT Filed Oct. 9, 2018, PCT No. PCT/US2018/054955
§ 371(c)(1), (2) Date Apr. 15, 2020,
PCT Pub. No. WO2019/079062, PCT Pub. Date Apr. 25, 2019.
Claims priority of provisional application 62/572,818, filed on Oct. 16, 2017.
Prior Publication US 2020/0240000 A1, Jul. 30, 2020
Int. Cl. C23C 14/58 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); C04B 35/468 (2006.01); H01L 21/02 (2006.01); C23C 14/08 (2006.01); C23C 14/02 (2006.01); C23C 14/06 (2006.01); C23C 16/02 (2006.01); C23C 16/32 (2006.01); C23C 16/40 (2006.01); H01L 49/02 (2006.01)
CPC C23C 14/088 (2013.01) [C04B 35/4682 (2013.01); C04B 35/4686 (2013.01); C23C 14/024 (2013.01); C23C 14/0635 (2013.01); C23C 14/5806 (2013.01); C23C 16/0272 (2013.01); C23C 16/32 (2013.01); C23C 16/409 (2013.01); C23C 16/45531 (2013.01); C23C 16/56 (2013.01); H01L 21/02197 (2013.01); H01L 28/55 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A structure comprising: a stacked assembly of a dielectric substrate, a MXene layer, and at least one layer of an oriented-perovskite-structured material,
wherein the perovskite-structured material is disposed on the MXene layer,
wherein the perovskite-structured material has the formula of (i) BaTiO3, (ii) Am−1Bi2MmO3m+3, (iii) Am+1MmO3m+1, or (iv) AmMmO3m+2,
wherein when the perovskite-structured material has the formula of Am−1Bi2MmO3m+3, A=Bi3+, Ba2+, Sr2+, Ca2+, Pb2+, K+, or Na+, and M=Ti4+, Nb5+, Ta5−, Mo6+, W6+, or Fe3+,
wherein when the perovskite-structured material has the formula of Am+1MmO3m+1, A=Bi3+, Ba2+, Sr2+, Ca2+, Pb2+, K+, or Na+and M=Ti4+, Nb5+, Ta5−, Mo6+, W6 +, or Fe3+, and
wherein when the perovskite-structured material has the formula of AmMmO3m+2, A=Bi3+, Ba2+, Sr2+, Ca2+, Pb2+, K+, or Na+, and M=Ti4+, Nb5+, Ta5−, Mo6+, W6+, or Fe3+, and
wherein the MXene layer is sandwiched between the dielectric substrate and the at least one layer of oriented perovskite-structured material.