CPC B08B 7/0035 (2013.01) [B08B 13/00 (2013.01); H01J 37/32082 (2013.01); H01J 37/32357 (2013.01); H01J 37/32715 (2013.01); H01J 37/32834 (2013.01); H01J 37/32935 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/335 (2013.01); H01J 2237/3341 (2013.01)] | 20 Claims |
1. A method of cleaning a substrate support, the method comprising:
introducing a cleaning gas consisting essentially of oxygen into a processing chamber containing the substrate support;
applying a radio frequency (RF) power to a remote plasma source including a remote plasma source volume where a plasma is struck and that is in fluid communication with the processing chamber to establish a reactive etching plasma that generates free radicals of the cleaning gas in the processing chamber;
reacting carbon-containing deposits on the substrate support with free radicals of the cleaning gas to form a gaseous by-products phase; and
evacuating the gaseous by-products phase from the processing chamber.
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