US 11,772,137 B2
Reactive cleaning of substrate support
Xi Chen, San Jose, CA (US); Shreesha Yogish Rao, Milpitas, CA (US); Sheng Guo, Oakland, CA (US); Chi H. Ching, Mountain View, CA (US); Thomas Blasius Brezoczky, Los Gatos, CA (US); and Cheng-Hsiung Tsai, Cupertino, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jul. 23, 2021, as Appl. No. 17/384,096.
Prior Publication US 2023/0029265 A1, Jan. 26, 2023
Int. Cl. H01J 37/32 (2006.01); B08B 7/00 (2006.01); B08B 13/00 (2006.01)
CPC B08B 7/0035 (2013.01) [B08B 13/00 (2013.01); H01J 37/32082 (2013.01); H01J 37/32357 (2013.01); H01J 37/32715 (2013.01); H01J 37/32834 (2013.01); H01J 37/32935 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/335 (2013.01); H01J 2237/3341 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of cleaning a substrate support, the method comprising:
introducing a cleaning gas consisting essentially of oxygen into a processing chamber containing the substrate support;
applying a radio frequency (RF) power to a remote plasma source including a remote plasma source volume where a plasma is struck and that is in fluid communication with the processing chamber to establish a reactive etching plasma that generates free radicals of the cleaning gas in the processing chamber;
reacting carbon-containing deposits on the substrate support with free radicals of the cleaning gas to form a gaseous by-products phase; and
evacuating the gaseous by-products phase from the processing chamber.