US 12,433,112 B2
Display device
JunSeuk Lee, Seoul (KR); SeongPil Cho, Goyang-si (KR); YongBin Kang, Gumi-si (KR); HeeJin Jung, Daegu (KR); Jangdae Kim, Daegu (KR); Dongyup Kim, Gimpo-si (KR); WonHo Son, Busan (KR); and Chanho Kim, Paju-si (KR)
Assigned to LG Display Co., Ltd., Seoul (KR)
Filed by LG Display Co., Ltd., Seoul (KR)
Filed on Jul. 15, 2024, as Appl. No. 18/773,350.
Application 18/773,350 is a continuation of application No. 17/538,496, filed on Nov. 30, 2021, granted, now 12,167,637.
Claims priority of application No. 10-2020-0185148 (KR), filed on Dec. 28, 2020.
Prior Publication US 2024/0373673 A1, Nov. 7, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10K 59/124 (2023.01); H10K 50/844 (2023.01); H10K 59/12 (2023.01); H10K 59/121 (2023.01); H10K 59/80 (2023.01); H10K 59/65 (2023.01)
CPC H10K 59/124 (2023.02) [H10K 50/844 (2023.02); H10K 59/12 (2023.02); H10K 59/121 (2023.02); H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H10K 59/873 (2023.02); H10K 59/65 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A display device, comprising:
a substrate including a display area and at least one non-display area, the at least one non-display area including a penetration area that includes a hole through a thickness of the substrate and a separation area;
a light emitting element disposed in the display area of the substrate, the light emitting element including an organic light emitting layer;
a first thin film transistor including a first semiconductor layer that comprises a first material and includes a first source region, a first channel region, and a first drain region, a first gate electrode that overlaps the first semiconductor layer with a lower gate insulating layer interposed therebetween, and a first source electrode and a first drain electrode that are electrically connected to the first semiconductor layer;
a second thin film transistor including a second semiconductor layer that comprises a second material and includes a second source region, a second channel region, and a second drain region, a second gate electrode that overlaps the second semiconductor layer with an upper gate insulating layer interposed therebetween, and a second source electrode and a second drain electrode that are electrically connected to the second semiconductor layer; and
a separation structure located in the separation area, the separation structure configured to disconnect the organic light emitting layer of the light emitting element from another organic light emitting layer in the separation area;
a dam in the separation area such that the separation structure is between the display area and the dam;
a support structure in the separation area, the support structure overlapping the dam; and
an insulating layer between the dam and the support structure in the separation area.