US 12,433,061 B1
Method and device for photosensor using graded wavelength configuring materials
Bei Shi, Santa Barbara, CA (US); Jonathan Klamkin, Santa Barbara, CA (US); Simone Tommaso Suran Brunelli, Santa Barbara, CA (US); and Bowen Song, Santa Barbara, CA (US)
Assigned to Aeluma, Inc., Goleta, CA (US)
Filed by Aeluma, Inc., Goleta, CA (US)
Filed on Dec. 6, 2022, as Appl. No. 18/062,467.
Int. Cl. H10F 77/40 (2025.01); G02B 5/22 (2006.01); H10F 30/221 (2025.01); H10F 71/00 (2025.01)
CPC H10F 77/413 (2025.01) [G02B 5/22 (2013.01); H10F 30/2215 (2025.01); H10F 71/1272 (2025.01)] 40 Claims
OG exemplary drawing
 
1. A method for selecting a wavelength for a sensor device and manufacturing the sensor device, the method comprising:
providing a selected wavelength range;
providing a silicon substrate comprising a backside region and a frontside region;
forming a GaAs buffer region overlying the frontside region;
selecting a wavelength configuring material for the selected wavelength range, the wavelength configuring material comprising a graded region, the graded region comprising a plurality of material regions of different elemental concentrations ranging from a first material composition to a second material composition, the first material composition comprising InAlAs or InGaAs or InGaP and the second material composition comprising InP, and wherein the plurality of material regions includes an interface region between each adjacent pair of the material regions;
forming the wavelength configuring material overlying the GaAs buffer region;
forming an n-type contact region overlying the wavelength configuring material;
forming an unintentionally doped (UID) InGaAs absorber region overlying the n-type contact region;
forming a band transition region overlying the UID InGaAs absorber region;
forming a non-absorbing p-type spacer region overlying the band transition region; and
forming a p-type contact region overlying the non-absorbing p-type spacer region.