US 12,433,046 B2
Image sensing device
Jong Eun Kim, Icheon-si (KR)
Assigned to SK HYNIX INC., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Nov. 11, 2021, as Appl. No. 17/524,489.
Claims priority of application No. 10-2021-0038196 (KR), filed on Mar. 24, 2021.
Prior Publication US 2022/0310681 A1, Sep. 29, 2022
Int. Cl. H10F 39/00 (2025.01)
CPC H10F 39/802 (2025.01) [H10F 39/8033 (2025.01)] 19 Claims
OG exemplary drawing
 
1. An image sensing device comprising:
a first photoelectric conversion region structured to generate photocharges based on incident light;
a first photogate disposed over the first photoelectric conversion region to collect photocharges generated by the first photoelectric conversion region;
a first transfer gate disposed at one side of the first photogate to transmit the photocharges collected by the first photogate to a first floating diffusion region;
a first photogate contact coupled to a first region of the first photogate; and
a second photogate contact coupled to a second region of the first photogate that is located closer to the first transfer gate than the first region in the first photogate,
wherein the second region is more deeply etched than the first region.