	US 12,433,005 B2
	RF switch device
Ja Geon Koo, Eumseong-gun (KR); Jin Hyo Jung, Suwon-si (KR); Hae Taek Kim, Bucheon-si (KR); Hyun Joong Lee, Daejeon (KR); and Jung Ah Kim, Dongducheon-si (KR)
Assigned to DB HiTek Co., Ltd., Bucheon-si (KR)
Filed by DB HITek Co., Ltd., Bucheon-si (KR)
Filed on Feb. 20, 2023, as Appl. No. 18/171,657.
Claims priority of application No. 10-2022-0047299 (KR), filed on Apr. 18, 2022.
Prior Publication US 2023/0335611 A1, Oct. 19, 2023
Int. Cl. H10D 64/27 (2025.01); H10D 8/00 (2025.01); H10D 84/80 (2025.01)

CPC H10D 64/519 (2025.01) [H10D 8/00 (2025.01); H10D 84/811 (2025.01)]

17 Claims

11. An RF switch device, comprising:

a first active region comprising a P well body region on or in a substrate and a plurality of source and drain terminals spaced apart from each other;

a second active region comprising a N well cathode on or in the substrate and first and second p-type anodes on opposite sides of the cathode; and

a gate electrode on the first active region and the second active region; and

a first conductive region connecting at least a portion of the P well and one of the first and second p-type anodes,

wherein the gate electrode comprises:

first and second horizontal electrodes spaced apart from each other; and

a plurality of cross-electrodes connecting the first and second horizontal electrodes.