US 12,433,001 B2
Semiconductor device and method of manufacture
Hungjin Kim, Nijmegen (NL); and Phil Rutter, Nijmegen (NL)
Assigned to Nexperia B.V., Nijmegen (NL)
Filed by NEXPERIA B.V., Nijmegen (NL)
Filed on Jan. 11, 2022, as Appl. No. 17/572,861.
Prior Publication US 2022/0223697 A1, Jul. 14, 2022
Int. Cl. H10D 64/00 (2025.01); H10D 30/01 (2025.01); H10D 30/66 (2025.01); H10D 64/01 (2025.01)
CPC H10D 64/117 (2025.01) [H10D 30/0297 (2025.01); H10D 30/665 (2025.01); H10D 30/668 (2025.01); H10D 64/01 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate having a first epitaxial layer of a first conductivity type arranged thereon and a voltage blocking element arranged in the first epitaxial layer, wherein the voltage blocking element is an electric field plate structure or a shield electrode;
a second epitaxial layer of the first conductivity type arranged on the first epitaxial layer;
a vertical switching element arranged in the second epitaxial layer, and
a dielectric film formed on the voltage blocking element, wherein the dielectric film electrically isolates the voltage blocking element from the vertical switching element.