| CPC H10D 64/111 (2025.01) [H10D 62/393 (2025.01); H10D 62/405 (2025.01); H10D 64/514 (2025.01)] | 18 Claims |
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1. A semiconductor device, comprising:
a first electrode;
a second electrode, a direction from the first electrode to the second electrode being along a first direction;
a third electrode;
a fourth electrode;
a semiconductor member, the semiconductor member including a first semiconductor region, a second semiconductor region and a third semiconductor region, the semiconductor member being provided between the first electrode and the second electrode,
the first semiconductor region including a first outer edge region, a first partial region, a second partial region, a third partial region, and a fourth partial region, the second partial region being located between the first partial region and the first outer edge region in a second direction crossing the first direction, the third partial region being located between the first partial region and the second partial region in the second direction, the fourth partial region being located between the third partial region and a part of the second electrode in the first direction, the first partial region, the third partial region, and the fourth partial region being of a first conductivity type, a direction from the first partial region to the third electrode being along the first direction, a direction from the second partial region to the fourth electrode being along the first direction,
the second semiconductor region being of a second conductivity type, the second semiconductor region being provided between the fourth partial region and the part of the second electrode in the first direction, the second semiconductor region being located between the third electrode and the fourth electrode in the second direction, and
the third semiconductor region being of the first conductivity type, the third semiconductor region being provided between the second semiconductor region and the part of the second electrode, the third semiconductor region being electrically connected to the second electrode;
a first conductive member provided between the first partial region and the third electrode in the first direction, the first conductive member being electrically connected to the second electrode;
a second conductive member including a first conductive portion, the first conductive portion being located between the second partial region and the fourth electrode in the first direction, the second conductive member being electrically connected to the second electrode; and
an insulating member including a first insulating region and a second insulating region, the first insulating region being provided between the semiconductor member and the third electrode, between the semiconductor member and the first conductive member, and between the first conductive member and the third electrode, the second insulating region being provided between the semiconductor member and the fourth electrode, between the semiconductor member and the second conductive member, and between the second conductive member and the fourth electrode,
an electrical resistivity of the second partial region being higher than an electrical resistivity of the first partial region.
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