US 12,432,977 B2
Semiconductor device and method for manufacturing the same
Shuen-Shin Liang, Hsinchu (TW); Min-Chiang Chuang, Hsinchu (TW); Chia-Cheng Chen, Hsinchu (TW); Chun-Hung Wu, Hsinchu (TW); Liang-Yin Chen, Hsinchu (TW); Sung-Li Wang, Hsinchu (TW); Pinyen Lin, Hsinchu (TW); Kuan-Kan Hu, Hsinchu (TW); Jhih-Rong Huang, Hsinchu (TW); Szu-Hsian Lee, Hsinchu (TW); Tsun-Jen Chan, Hsinchu (TW); Cheng-Wei Lian, Hsinchu (TW); Po-Chin Chang, Hsinchu (TW); Chuan-Hui Shen, Hsinchu (TW); Lin-Yu Huang, Hsinchu (TW); Yuting Cheng, Hsinchu (TW); Yan-Ming Tsai, Hsinchu (TW); and Hong-Mao Lee, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on May 26, 2022, as Appl. No. 17/825,516.
Prior Publication US 2023/0387316 A1, Nov. 30, 2023
Int. Cl. H01L 29/786 (2006.01); H10D 30/67 (2025.01)
CPC H10D 30/6743 (2025.01) [H10D 30/6729 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device, comprising:
forming a source/drain portion; and
forming a metal silicide layer and a transition layer such that the metal silicide layer is formed above the source/drain portion and the transition layer is formed beneath the metal silicide layer, the transition layer including selected elements, an atomic concentration of the selected elements in the transition layer being higher than an atomic concentration of the selected elements in each of the source/drain portion and the metal silicide layer.