| CPC H10D 30/6735 (2025.01) [H10D 30/43 (2025.01); H10D 62/121 (2025.01); H10D 64/258 (2025.01); H10D 84/83 (2025.01)] | 20 Claims |
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1. A semiconductor device comprising:
a substrate;
a first active pattern extending in a first horizontal direction on the substrate;
a second active pattern extending in the first horizontal direction on the substrate, and spaced apart from the first active pattern in the first horizontal direction;
a first plurality of nanosheets spaced apart from each other in a vertical direction on the first active pattern;
a second plurality of nanosheets spaced apart from each other in the vertical direction on the first and second active patterns;
a first gate electrode extending in a second horizontal direction different from the first horizontal direction on the first active pattern, and surrounding the first plurality of nanosheets;
a source/drain region between the first plurality of nanosheets and the second plurality of nanosheets;
an active cut penetrating the plurality of second nanosheets in the vertical direction, extending to the substrate, and separating the first and second active patterns; and
a sacrificial layer between the source/drain region and the active cut, being in contact with the active cut, and including silicon germanium (SiGe).
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