US 12,432,970 B2
Semiconductor devices with backside power rail and backside self-aligned via
Kuo-Cheng Chiang, Hsinchu County (TW); Shi Ning Ju, Hsinchu (TW); Kuan-Lun Cheng, Hsin-Chu (TW); Chih-Hao Wang, Hsinchu County (TW); and Cheng-Chi Chuang, New Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jun. 18, 2024, as Appl. No. 18/746,288.
Application 18/746,288 is a continuation of application No. 17/833,145, filed on Jun. 6, 2022, granted, now 12,021,123.
Application 17/833,145 is a continuation of application No. 17/080,521, filed on Oct. 26, 2020, granted, now 11,355,601, issued on Jun. 7, 2022.
Claims priority of provisional application 63/002,776, filed on Mar. 31, 2020.
Prior Publication US 2024/0339511 A1, Oct. 10, 2024
Int. Cl. H01L 29/417 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01)
CPC H10D 30/6729 (2025.01) [H01L 23/5226 (2013.01); H01L 23/5286 (2013.01); H10D 30/0243 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/116 (2025.01); H10D 64/01 (2025.01); H10D 64/018 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a first source/drain feature;
a second source/drain feature;
one or more channel layers connecting between the first source/drain feature and the second source/drain feature;
a gate structure engaging each of the one or more channel layers;
a first silicide layer over a top surface of the first source/drain feature;
a second silicide layer over a top surface of the second source/drain feature;
sidewall silicide layers over side surfaces of the first source/drain feature; and
sidewall dielectric layers over and interfacing side surfaces of the second source/drain feature, wherein each of the sidewall dielectric layers encloses an air gap.