| CPC H10D 30/668 (2025.01) [H10D 30/0297 (2025.01); H10D 64/513 (2025.01)] | 14 Claims |
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1. A semiconductor device comprising:
a semiconductor part including a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type in contact with the first semiconductor layer;
a first electrode electrically connected to the first semiconductor layer on a front surface side or a back surface side of the semiconductor part;
a second electrode electrically connected to the second semiconductor layer on the front surface side of the semiconductor part;
a gate electrode facing the second semiconductor layer;
an interlayer insulating film electrically insulating the gate electrode and the second electrode on the front surface side of the semiconductor part; and
a third semiconductor layer of the first conductivity type having: a first region in contact with the second semiconductor layer and the second electrode on the front surface side of the semiconductor part; and a second region provided between the interlayer insulating film and the second electrode in a second direction perpendicular to a first direction that is toward the second electrode from the first semiconductor layer.
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