US 12,432,964 B2
Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor (CMOS) integrated circuit technology
Glenn A. Glass, Portland, OR (US); Anand S. Murthy, Portland, OR (US); Robert Ehlert, Portland, OR (US); Han Wui Then, Portland, OR (US); Marko Radosavljevic, Portland, OR (US); Nicole K. Thomas, Portland, OR (US); and Sandrine Charue-Bakker, Portland, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Sep. 23, 2020, as Appl. No. 17/030,221.
Prior Publication US 2022/0093790 A1, Mar. 24, 2022
Int. Cl. H01L 29/78 (2006.01); H10D 30/65 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01); H10D 64/00 (2025.01); H10D 84/85 (2025.01)
CPC H10D 30/65 (2025.01) [H10D 62/824 (2025.01); H10D 62/8503 (2025.01); H10D 64/111 (2025.01); H10D 84/85 (2025.01)] 9 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a silicon (111) substrate having a first region and a second region;
a structure comprising gallium and nitrogen on the first region of the silicon (111) substrate, the structure comprising gallium and nitrogen having an uppermost surface and a bottommost surface;
a structure comprising germanium on the second region of the silicon (111) substrate, the structure comprising germanium having an uppermost surface co-planar with the uppermost surface of the structure comprising gallium and nitrogen, and the structure comprising germanium having a bottommost surface co-planar with the bottommost surface of the structure comprising gallium and nitrogen; and
a dielectric spacer laterally between and in contact with the structure comprising gallium and nitrogen and the structure comprising germanium, the dielectric spacer on the silicon (111) substrate, wherein the dielectric spacer has an uppermost surface co-planar with the uppermost surface of the structure comprising germanium and with the uppermost surface of the structure comprising gallium and nitrogen, and wherein the dielectric spacer has a bottommost surface co-planar with the bottommost surface of the structure comprising germanium and with the bottommost surface of the structure comprising gallium and nitrogen.