US 12,432,960 B2
Wraparound contact with reduced distance to channel
Ruilong Xie, Niskayuna, NY (US); Reinaldo Vega, Mahopac, NY (US); Yao Yao, Albany, NY (US); Andrew M. Greene, Slingerlands, NY (US); Veeraraghavan S. Basker, Schenectady, NY (US); Pietro Montanini, Albany, NY (US); Jingyun Zhang, Albany, NY (US); and Robert Robison, Rexford, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Dec. 7, 2021, as Appl. No. 17/544,328.
Prior Publication US 2023/0178621 A1, Jun. 8, 2023
Int. Cl. H10D 30/00 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 64/23 (2025.01); H10D 84/01 (2025.01)
CPC H10D 30/501 (2025.01) [H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 62/151 (2025.01); H10D 64/256 (2025.01); H10D 84/013 (2025.01); H10D 84/0149 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A nanosheet semiconductor device comprising:
a plurality of channel nanosheets each connected to a source/drain region;
a gate surrounding the plurality of channel nanosheets;
the source/drain region comprising a front surface, a rear surface, a top surface, and an internal recess comprising two or more sloped internal surfaces extending downward from the top surface; and
a source/drain region contact in physical contact with the internal recess, in physical contact with the front surface, and in physical contact with the rear surface of the source/drain region.