| CPC H10D 12/481 (2025.01) [H10D 12/035 (2025.01); H10D 12/038 (2025.01); H10D 62/127 (2025.01); H10D 62/393 (2025.01); H10D 64/231 (2025.01)] | 8 Claims |
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1. A semiconductor device comprising:
a semiconductor substrate having a first main surface and a second main surface opposite to the first main surface;
a drift region of a first conductivity type formed in the semiconductor substrate; and
a cell region formed on the first main surface of the semiconductor substrate,
the cell region includes:
an active cell region provided in the semiconductor substrate from the first main surface toward the drift region,
a trench gate electrode and a trench emitter electrode formed in a pair of trenches which is formed on a surface of the first main surface so as to extend in a first direction and sandwich the active cell region in a plan view,
a body region of a second conductivity type opposite to the first conductivity type formed in a surface region of the drift region at a side of the first main surface,
an inactive cell region provided in the semiconductor substrate at both sides of the active cell region so as to sandwich the active cell region and adjacent the trench gate electrode and the trench emitter electrode in a plan view,
an emitter region of the first conductivity type provided in the active cell region and formed in a surface region of the body region at the side of the first main surface;
a contact hole in contact with the trench emitter electrode, the emitter region and the body region;
a first hole barrier region of the first conductivity type which is formed in the drift region under the body region in the active cell region and has an impurity concentration higher than that of the drift region and lower than that of the emitter region;
a floating region of the second conductivity type formed under the body region in the inactive cell region;
an end trench gate electrode connected to one end of the trench gate electrode and extending in a second direction different from the first direction in a plan view and formed in the surface of the first main surface; and
an end trench emitter electrode connected to one end of the trench emitter electrode and extending in the second direction in a plan view and formed in the surface region on the first main surface in the inactive cell region,
wherein a second hole barrier region of the first conductivity type formed in the drift region under the body region between the end trench gate electrode and the end trench emitter electrode in a plan view and having an impurity concentration higher than that of the drift region and lower than that of the emitter region, and
wherein the body region in the active cell region and the body region in the inactive cell region are connected by the body region between the end trench gate electrode and the end trench emitter electrode.
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